Is the Ne operation of the helium ion microscope suitable for electron backscatter diffraction sample preparation?

• Annalena Wolff

Beilstein J. Nanotechnol. 2021, 12, 965–983, doi:10.3762/bjnano.12.73

• century [1]. From its beginnings as primarily an imaging tool [2][3][4][5][6][7][8][9] it was established as a key tool in nanofabrication [10][11][12][13][14][15], defect engineering [16][17], and recently for material analysis [18][19]. The extended range of applications in which the second-generation

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This

• paper reviews the materials modification research that has been enabled by the helium ion microscope since its commercialization in 2007, ranging from fundamental studies of beam–sample effects, to the prototyping of new devices with features in the sub-10 nm domain. Keywords: defect engineering

• following, the field of materials modification research using the HIM is reviewed, subdivided into the following areas: 1. defect engineering, 2. ion implantation, 3. irradiation-induced restructuring, 4. resist-based lithography, 5. direct-write lithography/milling (including gas-assisted milling), and 6

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• impacted graphene carrier concentration and strain. It is, therefore, possible to consider the use of NW substrates for defect engineering in graphene and probably in other 2D materials. SEM images of graphene on GaN NWs with different variations in height in N0 (a,d), N100 (b,e), and N500 (c,f) samples

• graphene on rarely distributed nanowires. Our results also show modification of graphene carrier concentration and strain by different types of defects present in graphene. Therefore, the nanowire substrate is promising not only for strain and carrier concentration engineering but also for defect

• engineering. Keywords: carrier concentration; gallium nitride; graphene; nanowires; Raman spectroscopy; scattering on defects; strain; Introduction The combination of excellent electrical and mechanical properties with interesting physical phenomena occurring in two-dimensional structures makes graphene an

Scanning transmission helium ion microscopy on carbon nanomembranes

• Daniel Emmrich,
• Annalena Wolff,
• Nikolaus Meyerbröker,
• Jörg K. N. Lindner,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2021, 12, 222–231, doi:10.3762/bjnano.12.18

• established as a key nanofabrication tool for milling [7][8][9], defect engineering [10][11], and resist-based lithography [12][13], overcoming the resolution limitations of other FIB techniques [14][15]. Both bulk samples as well as thin membranes have been structured using the HIM. On membranes, the sputter

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• , we find that irradiating the electrode–channel interface has a deleterious impact on charge transport when contrasted with irradiations confined only to the transistor channel. Keywords: 2D materials; contacts; defect engineering; helium ion microscope; ion beam doping; vacancies; two-dimensional

Disorder in H⁺-irradiated HOPG: effect of impinging energy and dose on Raman D-band splitting and surface topography

• Lisandro Venosta,
• Noelia Bajales,
• Sergio Suárez and
• Paula G. Bercoff

Beilstein J. Nanotechnol. 2018, 9, 2708–2717, doi:10.3762/bjnano.9.253

• -board storage, molecule pinning and other carbon-based clean-energy applications. This is a topic of current interest in nanotechnology, in areas devoted to the control of properties by defect engineering in carbon-based materials. Experimental The graphite used for this work was HOPG of ZYB grade (SPI

• characterization showed a distribution of surface defects, which were ascribed to the burst of hydrogen blisters formed as a consequence of the irradiation process. The results presented in this work contribute to the current trend in nanotechnology in areas devoted to the control of properties by defect

• engineering in carbon-based materials. Keywords: disorder; highly oriented pyrolytic graphite (HOPG); ion–solid interactions; Raman spectroscopy; topography; Introduction The development of novel methods to control the properties of carbon-based materials by introducing disorder is currently a subject of